Sean M. w88 bet

Associate Dean, w88 bet of Science | Associate Professor of Chemistry
Sean w88 bet headshot

Summary

In my role as associate dean for the w88 bet of Science, I oversee the administration of academic and student programs, including WiSE and NevadaTeach. I work closely with the dean, department chairs and other w88 bet leadership to support and coordinate undergraduate and graduate curriculum and assessment efforts in the w88 bet.

Research interests

Our research is centered on the investigation of growth mechanisms of semiconductor materials during processes such as plasma-enhanced chemical vapor deposition (PECVD). To mimic these plasmas under more carefully controlled conditions, we use a hyperthermal beam of the reactive species of interest and single crystal semiconductor wafers. Specifically, we generate a variable energy beam of mass-selected, reactive atomic or molecular ions, with energies in the 1-100 eV range, and use this as the source of growth species. The interaction of these species with clean, well characterized semiconductor surfaces is then examined in an ultrahigh vacuum environment (pictured below). Mass spectrometry is used to examine the identity of desorbing and scattered species and to provide kinetic information w88 bet reactions occurring on the surface. Low-energy electron diffraction and Auger electron spectroscopy are used to examine the crystallinity and composition of the resulting surfaces. Results from such experiments allow for a more complete understanding of the mechanisms involved in reactive ion-surface interactions, an area of great importance during these PECVD processes.

Systems of particular interest for our group involve heteroepitaxial growth of lattice-mismatched materials, such as Ge/Si or SiC/Si. These systems are becoming increasingly technologically important; however, the growth mechanisms of the materials are not yet completely understood. Results from our experiments will provide data w88 bet many of the fundamental heterogeneous reactions involved in the growth of these materials.

Education

  • NRC-NIST Postdoctoral Fellow (1993-1995) and Postdoctoral (1995-1997), JILA, w88 bet of Colorado (Stephen R. Leone)
  • Ph.D. (1993), w88 bet of Minnesota (Doreen G. Leopold)
  • B.S. (1988), State University of New York, w88 bet at Purchase

Publications

  • Lee, M.V.; Richards, J.L.; Linford, M.R.; w88 bet, S.M. Gas phase chemomechanical modification of silicon.J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.—Process., Meas., Phenom.2006,24, 750-755.
  • Tam-Chang, S.-W.; Seo, W.; Rove, K.O.; w88 bet, S.M. Molecularly designed chromonic liquid crystals for the fabrication of broad spectrum polarizing materials.Chem. Mater.2004,16, 1832-1834. [Communication]
  • Zhang, L.; Carman, A.J.; w88 bet, S.M. Adsorption and thermal decomposition chemistry of 1-propanol and other primary alcohols on the Si(100) surface.J. Phys. Chem. B2003,107, 8424-8432.
  • Carson, T.D.; Seo, W.; Tam-Chang, S.-W.; w88 bet, S.M. Novel polarized photoluminescent films derived from sequential self-organization, induced-orientation, and order transfer processes.Chem. Mater.2003,15, 2292-2294. [Communication]
  • Carman, A.J.; Zhang, L.; Liswood, J.L.; w88 bet, S.M. Methylamine adsorption on and desorption from Si(100).J. Phys. Chem. B2003,107, 5491-5502.
  • Tam-Chang, S.-W.; Seo, W.; Iverson, I.K.; w88 bet, S.M. Ionic quaterrylenebis(dicarboximide): A novel mesogen and long-wavelength polarizing material.Angew. Chem., Int. Ed.2003,42, 897-900. [Communication]
  • Iverson, I.K.; w88 bet, S.M.; Seo, W.; Tam-Chang, S.-W.; Pindzola, B.A. Controlling molecular orientation in solid films via self-organization in the liquid-crystalline phase.Langmuir2002,18, 3510-3516.
  • Ervin, K.M.; Ramond, T.M.; Davico, G.E.; Schwartz, R.L.; w88 bet, S.M.; Lineberger, W.C. Naphthyl radical: Negative ion photoelectron spectroscopy, Franck-Condon simulation, and thermochemistry.J. Phys. Chem. A2001,105, 10822-10831.
  • Mulcahy, C.P.A.; Carman, A.J.; w88 bet, S.M. The adsorption and thermal decomposition of dimethylamine on Si(100).Surf. Sci.2000,459, 1-13.